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Atomic Layer Etching (ALE) is a self-limiting cyclic dry etching process used in nanofabrication that allows for material etching on the atomic scale in a layer-by-layer regime. In practical applications, such as using commercially available reactive ion etching (RIE) tools, the ion energy in the plasma exceeds the sputtering threshold (typically 20 to 40 eV for Si), leading to a Quasi-ALE (Q-ALE)
