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We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm, below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate decreases with increasing diameter due to the effect of material diffusion to the growth point

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Patch antennas on inhomogeneous substrates are analyzed with the stable FEM-FDTD hybrid method [T. Rylander and A. Bondeson, “Stable FEMFDTD hybrid method for Maxwell’s equations,” Comput. Phys. Comm. 125, 75 (2000)] and an analytic propagator technique. For inhomogeneous substrates with a fixed homogenized value of the permittivity, our results conjecture that a decrease of the permittivity in the