Point Defect Induced Potential Wells across the m-Plane of Core/Shell GaN Nanowires
Nanowires are promising structures for next-generation photonic devices due to their superior structural, optical, and electronic properties compared to thin films. In this study, unexpected electrostatic potential wells across the non-polar m-plane and at the core/shell interface in n-type GaN core/shell nanowires, grown via metal-organic vapor phase epitaxy, are reported. Using advanced electron
