A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
Complete 4F2 vertical nanowire (VNW) 1T1R cells with 106 cycles switching endurance and with a demonstrated capability of performing Boolean logic are fabricated and characterized in cross-point arrays. The performance of the vertical 1T1R cell is benefited from using the same III-V/high- k interface both for the vertical GAA MOSFET selector as well as the ReRAM. In this paper, we also compare the
