Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the a
