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In this thesis a simulation of a vertical GaN FinFET is created. The mobility models are first calibrated against known measurements of a real device. The model is then used to investigate the effects of scaling the device. It is shown that a 1 µm drift layer with a 1 µm fin could achieve a breakdown voltage of 300 V and for a 5 µm drift layer a breakdown voltage of 700 V can be reached. The resul
